Influence of a large magnetic field on electron diffusion in degenerate n-type specimens of InAs and InSb at very low temperatures-Reference-Cited by-同舟云学术

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Influence of a large magnetic field on electron diffusion in degenerate n-type specimens of InAs and InSb at very low temperatures

Published:1973-09 Issue:9 Volume:23 Page:923-926
ISSN:0011-4626
Container-title:Czechoslovak Journal of Physics
language:en
Short-container-title:Czech J Phys

Author:

Chakravarti A. N.,Parui D. P.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/BF01586873.pdf

Reference7 articles.

1. Lindholm F. A., Ayers R. W., Proc. IEEE.56 (1968), 371.

2. Spenke E., Electronic Semiconductors, McGraw-Hill, New York 1958, p. 293 and 384.

3. Blakemore J. S., Semiconductor Statistics, Pergamon Press, London 1962, p. 87.

4. Blakemore J. S., ibid. p. 90.

5. Chakravarti A. N., Parui D. P., Czech. J. Phys.,B 23 (1973), 927.

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1. Determination of the diffusivity-mobility ratio in highly degenerate semiconductors at low temperatures from measurements of wavelength shift with cavityQ in junction lasers;Czechoslovak Journal of Physics;1973-09

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