Ex-situ XPS-investigation of the interface between PE-CVD SiO2 and wet chemically etched MO-CVD epitaxial layers of In0.53Ga0.47As
Author:
Publisher
Springer Science and Business Media LLC
Subject
Biochemistry,Analytical Chemistry,Biochemistry
Link
http://link.springer.com/content/pdf/10.1007/BF00321342.pdf
Reference17 articles.
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4. Wandel K, Procop M, Richter U, Wolf R (1993) Semicond Sci Technol 8:1438?1444
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Surface Analysis: X-ray Photoelectron Spectroscopy and Auger Electron Spectroscopy;Analytical Chemistry;1998-05-01
2. A Fundamental Study on n‐ and p ‐ In0.53Ga0.47As in H 2 O 2 Solution: Electrochemical Behavior and Selective Etching vs. InP;Journal of The Electrochemical Society;1997-04-01
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