Observation of unequal densities for sulfur defects in silicon predeposited by low fluence ion implantation*-Reference-Cited by-同舟云学术

Observation of unequal densities for sulfur defects in silicon predeposited by low fluence ion implantation*

Published:1979-11 Issue:6 Volume:8 Page:781-788
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Myers D. R.,Phillips W. E.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02651185.pdf

Reference13 articles.

1. M. G. Buehler, in Semiconductor Silicon/1973, H. R. Huff and E. Sirtl, Eds., p. 549 (Electrochemical Society, Princeton, N.J., 1973).

2. Handbook of Chemistry and Physics, 51st ed., edited by R. C. Weast (Chemical Rubber Co., Cleveland, 1970).

3. R. Y. Koyama, W. E. Phillips, D. R. Myers, Y. M. Liu, and H. B. Dietrich, Solid-state Electron.21, 953 (1978).

4. D. R. Myers, R. Y. Koyama, and W. E. Phillips, Frac. Int. Conf. on Ion Beam Modification of Materials, September 4-8, 1978, Budapest (to be published).

5. M. G. Buehler, Semiconductor Measurement Technology: Microelectronic Test Patterns: An Overview, NBS Special Publication 400-6 (August 1974).

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1. The electrical properties of sulphur in silicon;Journal of Applied Physics;1981-07

2. Optical study of isotopic effects in the sulfur deep level in silicon;Applied Physics Letters;1980-11

3. Deep sulfur‐related centers in silicon;Journal of Applied Physics;1980-08

4. Energy Levels in Silicon;Annual Review of Materials Science;1980-08

5. An implantation predeposition technique for the introduction of deep-level chemical impurities;Radiation Effects;1980-01