Facile Synthesis and Characterization of Pentanary Zn(Co, Cd, S)Se Semiconductor Thin Films
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Publisher
Springer International Publishing
Link
https://link.springer.com/content/pdf/10.1007/978-3-030-69925-3_85
Reference10 articles.
1. Dejene FB (2010) Material and device properties of Cu(In, Ga)Se2 absorber films prepared by thermal reaction of InSe/Cu/GaSe alloys to elemental Se vapor. Curr Appl Phys 10:36–40
2. Santos IMDL, Courel M, Mathews NR, Mathew X (2017) Study on the effect of annealing under pressure on the material properties of Cu2ZnSn(S, Se)4 thin films Mater. Sci Semicond Process 68:68–75
3. Kamble SS, Sikora A, Deshmukh SL, Chavan GT, Karande VS, Pawar ST, Tarwal NL, Deshmukh LP (2016) Quaternary Co1−x−yZnxCdyS thin films: a facile synthesis approach and its aptness for the applications in micro-devices. Mater Lett 167:61–64
4. Chavan GT, Pawar ST, Prakshale VM, Sikora A, Pawar SM, Chaure NB, Kamble SS, Maldar NN, Deshmukh LP (2017) Quaternary schematics for property engineering of CdSe thin films. Appl Surf Sci 426:466–479
5. Chavana GT, Sabah FA, Kamble SS, Prakshale VM, Pawar ST, Patil S, Sunhwa Lee A, Sikora LP, Deshmukh S, Cho Y, Cho E-C, Yi J (2020) Novel synthesis method for quaternary Cd(Cu, Zn)Se thin films and its characterizations ceramics international 46:74–80
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