Measurement of the Frequency Response of Transistors
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Publisher
Springer International Publishing
Link
https://link.springer.com/content/pdf/10.1007/978-3-030-77775-3_3
Reference10 articles.
1. D. V. Singh, K. A. Jenkins, J. Appenzeller, D. Neumayer, A. Grill and H.-P. Wong, "Frequency response of top-gated carbon nanotube field-effect transistors," IEEE Transactions on Nanotechnology, vol. 3, no. 3, pp. 383-387, Sept. 2004, DOI: https://doi.org/10.1109/TNANO.2004.828577.
2. P. J. Burke, "An RF circuit model for carbon nanotubes," IEEE Transactions on Nanotechnology, vol. 2, no. 1, pp. 55-58, March 2003, DOI: https://doi.org/10.1109/TNANO.2003.808503.
3. S.-J. Han, K.A. Jenkins, A. Valdes-Garcia, A.D. Franklin, A.A. Bol, and W. Haensch, “High-Frequency Graphene Voltage Amplifier,” Nanoletters, vol 11, no. 9, pp. 3690-3693, Aug. 2011, https://doi.org/10.1021/nl2016637.
4. D. J. Frank and J. Appenzeller, "High-frequency response in carbon nanotubefield-effect transistors," IEEE Electron Device Letters, vol. 25, no. 1, pp. 34-36, Jan. 2004, DOI: https://doi.org/10.1109/LED.2003.821589.
5. Y. Taur and T.H. Ning, Fundamentals of Modern VLSI Devices, Cambridge: Cambridge University Press, 1998.
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