Performance of MCz Si Material for p+n−n+ and n+p−p+ Si Sensor Design: Status and Development for HL-LHC-Reference-Cited by-同舟云学术

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Performance of MCz Si Material for p+n−n+ and n+p−p+ Si Sensor Design: Status and Development for HL-LHC

Published:2019 Issue: Volume: Page:39-57
ISSN:
Container-title:Si Detectors and Characterization for HEP and Photon Science Experiment
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Author:

Srivastava Ajay Kumar

Publisher

Springer International Publishing

Link

http://link.springer.com/content/pdf/10.1007/978-3-030-19531-1_3

Reference22 articles.

1. Fretwurst, E.: Recent advancements in the development of radiation hard semiconductor detectors for S-LHC. Nucl. Instr. Methods Phys. Res. A. A552, 7–19 (2005)

2. Huntinen, M.: SLHC Electronics workshop (2004), CERN

3. Lindstrom, G.: Radiation damage in silicon detectors. Nucl. Instr. Methods Phys. Res. A. A512, 30–43 (2003)

4. RD50 Status Reports CERN-LHCC-2003-2004-2005-2007 [Online]. Available http://rd50.web.cern.ch/rd50/

5. Moll, M.: Ph.D. thesis. Radiation Damage in Silicon Particle Detectors, University of Hamburg, Germany, 1999, DESY-THESIS-1999-40, ISSN 1435-8085

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