Enhancing the Performance of GaN/InGaN MQW Solar Cells by the Piezoelectric Polarization Stress
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Publisher
Springer International Publishing
Link
https://link.springer.com/content/pdf/10.1007/978-3-031-14615-2_53
Reference12 articles.
1. Ager, J.W., et al.: Mg‐doped InN and InGaN Photoluminescence, capacitance–voltage and thermopower measurements. Phys. Stat. Sol. (b) 245, 873–877 (2008). https://doi.org/10.1002/pssb.200778731
2. Vitanov, S., Palankovski, V.: Normally-Off AlGaN/GaN HEMTs with InGaN cap layer: a simulation study. Solid-State Electron. 52, 1791–1795 (2008). https://doi.org/10.1016/j.sse.2008.07.011
3. Jani, O., Ferguson, I.: Design and characterization of GaN/InGaN solar cells. Appl. Phys. Lett. 91, 132117 (2007). https://doi.org/10.1063/1.2793180
4. Brown, G.F., Ager, J.W., Walukiewicz, W., Wu, J.: Finite element simulations of compositionally graded InGaN solar cells. Sol. Energy Mater. Sol. Cells 94, 478–483 (2010). https://doi.org/10.1016/j.solmat.2009.11.010
5. Chang, J.Y., Kuo, Y.K.: Numerical study on the influence of piezoelectric polarization on the performance of p-on-n (0001)-face GaN/InGaN p-i-n solar cells. IEEE Electron Dev. Lett. 32, 937–939 (2011). https://doi.org/10.1109/LED.2011.2150195
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