Author:
Ferdaus Farah,Rahman Md Tauhidur
Publisher
Springer International Publishing
Reference76 articles.
1. J.A. Mandelman, et al., Challenges and future directions for the scaling of dynamic random-access memory (DRAM). IBM J. Res. Dev. 46(2–3), 187–212 (2002)
2. P. Zhou et al., A durable and energy efficient main memory using phase change memory technology. ACM SIGARCH Comput. Archit. News 37(3), 14–23 (2009)
3. Y. Zhang et al., A novel ReRAM-based main memory structure for optimizing access latency and reliability, in Proceedings of the 54th Annual Design Automation Conference 2017 (2017)
4. B. Dieny, R.B. Goldfarb, K.J. Lee, Introduction to Magnetic Random-Access Memory (Wiley, Hoboken, 2016). ISBN: 978-1-11907-935-4
5. H. Ohno, et al., Spin-transfer-torque magnetoresistive random access memory (STT-MRAM) technology, in Advances in Non-Volatile Memory and Storage Technology (2014), pp. 455–494
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