Solution of Peak Junction Temperature with Crank-Nicolson and SOR Approach
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Publisher
Springer International Publishing
Link
https://link.springer.com/content/pdf/10.1007/978-3-031-04028-3_15
Reference12 articles.
1. Muthuvalu, M.S., Asirvadam, V.S., Mashadov, G.: Performance analysis of arithmetic mean method in determining peak junction temperature of semiconductor device. Ain Shams Eng. J. 6(4), 1203–1210 (2015)
2. Yangjun, Z., Qinghai, M., Xinghua, Z., Zhengsheng, H.: A novel electrical measurement method of peak junction temperature based on the excessive thermotaxis effect of low current. Chin. J. Semiconduct. 30(9), 094005-1–094005-4 (2009)
3. White, M., Cooper, M., Chen, Y., Bernstein, J.: Impact of junction temperature on microelectronic device reliability and considerations for space applications. In: 2003 IEEE International on Integrated Reliability Workshop Final Report, pp. 133–136 (2003)
4. Noutsos, D.: Optimal stretched parameters for the SOR iterative method. J. Comput. Appl. Math. 48, 293–308 (1993)
5. Pierce, D.J., Hadjidimos, A., Plemmons, R.J.: Optimality relationships for p-cyclic SOR. Numer. Math. 56, 635–643 (1990)
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