Isotope Engineering of GaN for Boosting Transistor Speeds

Author:

Khurgin J.,Jena D.

Publisher

Springer International Publishing

Reference18 articles.

1. W. Shockley, Hot Electrons in Germanium and Ohm’s Law. Bell Syst. Tech. J. 30, 990–1034 (1951)

2. It is interesting to note that around the same time as Shockley invoked the concept of phonons to explain current saturation in semiconductors, and Shockley and Bardeen explained the deformation potential phonon scattering to explain mobilities of semiconductors, Herbert Fröhlich contributed to explaining strong polar electron-phonon interaction that would lead to the discovery of the reason for electron pairing, and form the basis for the Bardeen-Cooper-Schrieffer (BCS) theory of superconductivity

3. K. Wang, J. Simon, N. Goel, D. Jena, Optical study of hot electron transport in GaN: Signatures of the hot-phonon effect. Appl. Phys. Lett. 88, 022103 (2006)

4. H. Siegle, G. Kaczmarczyk, L. Filippidis, A.P. Litvinchuk, A. Hoffmann, C. Thomsen, Zone-boundary phonons in hexagonal and cubic GaN. Phys. Rev. B 55, 7000 (1997)

5. T. Ruf, J. Serrano, M. Cardona, P. Pavone, M. Pabst, M. Krisch, M. D’Astuto, T. Suski, I. Grzegory, M. Leszczynski, Phonon dispersion curves in Wurtzite-structure GaN determined by inelastic X-ray scattering. Phys. Rev. Lett. 86, 906 (2001)

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