Excitonic States in Brillouin Zone Center of GaSe Layered Crystals
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Publisher
Springer International Publishing
Link
https://link.springer.com/content/pdf/10.1007/978-3-030-92328-0_39
Reference9 articles.
1. Belen’kii, G.L., Stopachinskii, V.B.: Electronic and vibrational spectra of III-VI layered semiconductors. Phys. Uspekhi 140, 234 (1983). https://doi.org/10.1070/PU1983v026n06ABEH004420
2. Hsu, Y.-K., Chen, Ch.g-W., Huang, J.Y., Pan, C.-L.: Erbium doped GaSe crystal for mid-IR applications. Opt. Express 14(12), 5484 (2006).https://doi.org/10.1364/OE.14.005484
3. Pham, K.D., Phuc, H.V., Hieu, N.N., et al.: Electronic properties of GaSe/MoS2 and GaS/MoSe2 heterojunctions from first principles calculation. AIP Adv. 8, 075207 (2018). https://doi.org/10.1063/1.5033348
4. Wei, C., Chen, X., Li, D., et al.: Bound exciton and free exciton states in GaSe thin slab. Sci. Rep. 6, 33890 (2016). https://doi.org/10.1038/srep33890
5. Aziza1, Z.B., Zólyomi, V., Henck, H., et al.: Valence band inversion and spin-orbit effects in the electronic structure of monolayer GaSe. Phys. Rev. B 98, 115405 (2018).https://doi.org/10.1103/PhysRevB.98.115405
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