Implications of Field Plate HEMT Towards Power Performance at Microwave X - Band
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Publisher
Springer Nature Switzerland
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https://link.springer.com/content/pdf/10.1007/978-3-031-21514-8_6
Reference37 articles.
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3. Bother, K.M., et al.: Improved X-Band performance and reliability of a GaN HEMT with sunken source connected field plate design. IEEE Electron Device Lett. 43(3), 354–357 (2022). https://doi.org/10.1109/LED.2022.3146194
4. Soni, A., Ajay, Shrivastava, M.: Novel drain-connected field plate GaN HEMT designs for improved VBD–RON tradeoff and RF PA performance. IEEE Trans. Electron Devices. 67(4), 1718–1725 (2020). https://doi.org/10.1109/TED.2020.2976636
5. Sehra, K., Kumari, V., Gupta, M., Mishra, M., Rawal, D.S., Saxena, M.: A Π-shaped p-GaN HEMT for reliable enhancement mode operation. Microelectron. Reliab. 133(114544), 1–14 (2022). https://doi.org/10.1016/j.microrel.2022.114544
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