A GaN Based Reverse Recovery Time Limiter Circuit Integrated with a Low Noise Amplifier-Reference-Cited by-同舟云学术

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A GaN Based Reverse Recovery Time Limiter Circuit Integrated with a Low Noise Amplifier

Published:2022 Issue: Volume: Page:212-221
ISSN:1865-0929
Container-title:Communications in Computer and Information Science
language:
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Author:

Bajpai Neha^ORCID,Chauhan Yogesh Singh

Publisher

Springer Nature Switzerland

Link

https://link.springer.com/content/pdf/10.1007/978-3-031-21514-8_19

Reference26 articles.

1. Aamir Ahsan, S., Ghosh, S., Khandelwal, S., Chauhan, Y.S.: Physics-based multi-bias RF large-signal GaN HEMT modeling and parameter extraction flow. IEEE J. Electron Devices Soc. 5(5), 310–319 (2017). https://doi.org/10.1109/JEDS.2017.2724839

2. Aamir Ahsan, S., Ghosh, S., Sharma, K., Dasgupta, A., Khandelwal, S., Chauhan, Y.S.: Capacitance modeling in dual field-plate power GaN HEMT for accurate switching behavior. IEEE Trans. Electron Devices 63(2), 565–572 (2016). https://doi.org/10.1109/TED.2015.2504726

3. Andrei, C., Bengtsson, O., Doerner, R., Chevtchenko, S.A., Heinrich, W., Rudolph, M.: Dynamic behaviour of a low-noise amplifier GAN MMIC under inputpower overdrive. In: 2015 European Microwave Conference (EuMC), pp. 231–234 (2015). https://doi.org/10.1109/EuMC.2015.7345742

4. Bahl, I.: Matching network components, chap. 6, pp. 125–148 John Wiley Sons, Ltd (2009). https://doi.org/10.1002/9780470462348.ch6. https://onlinelibrary.wiley.com/doi/abs/10.1002/9780470462348.ch6

5. Bajpai, N., Chauhan, Y.S.: A broadband power amplifier MMIC to compensate the frequency dependent behaviour. In: 2021 IEEE MTT-S International Microwave and RF Conference (IMaRC), pp. 1–4 (2021). https://doi.org/10.1109/IMaRC49196.2021.9714648

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A GaN Low Noise Amplifier Design Using Numerical Optimization;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

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