1. Palmateer SC (1982) Manganese redistribution in molecular beam epitaxial grown GaAs. Master Thesis, Electrical Engineering, Cornell University
2. Palmateer SC (1985) Mechanisms of impurity redistribution in gallium arsenide substrates and molecular beam epitaxially grown layers. PhD Thesis, Electrophysics, Cornell University
3. Palmateer SC, Eastman LF, Calawa AR (1984) The use of substrate annealing as a gettering technique prior to MBE growth. J Vac Sci Technol B 2:188
4. Palmateer SC, Maki PA, Katz W, Calawa AR, Hwang JCM, Eastman LF (1984) The influence of V:III flux ratio on unintentional impurity incorporation during molecular beam epitaxial growth. In: Proceedings of the 1984 international symposium on gallium arsenide and related compounds, Biarritz, France, 26–28 Sept 1984
5. Palmateer SC, Maki P, Hollis M, Eastman LF, Ward I, Hitzman C (1982) Growth of planar doped barrier structures in gallium arsenide by molecular beam epitaxy. In: Proceedings of the 1982 international symposium on gallium arsenide and related compounds, Albuquerque, NM, Sept 1982