Formation of Defects and Clusters on the Surface of Crystals Si(111) And SiOx at Irradiation by Electrons and Ions

Author:

Sharopov Utkirjon

Publisher

Springer Nature Switzerland

Reference11 articles.

1. Schwartz, K.K., Ekmanis, Yu.A.: Dielectric Materials: Radiation Processes and Radiation Resistance, 187p. Zinatne, Riga (1989)

2. Komolov, S.A.: Integral Secondary-Electronic Spectroscopy of the Surface, p. 180. Leningrad State University, Leningrad (1986)

3. Robertson J.: The physics and technology of amorphous SiO2. In: Devine, R.A.B. (ed.), National center for Telecommunication Investigation, рp. 37–46. Meyland, France (1988)

4. McRae, E.G.: Multiple-scattering treatment of low energy electron diffraction intensities. J. Chem. Phys. 49(9), 3258–3275 (1966). https://doi.org/10.1016/0039-6028(92)90044-7

5. Dzhemilev, N.Kh.: Mechanism of Formation of Molecular Clusters by Ion Sputtering. In: Surface. X-ray, Synchrotron, and Neutron Investigation, 2012, No. 8, pp. 1–7

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