Mathematical Models for the Double-Gate MOSFET
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Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-030-35993-5_7
Reference32 articles.
1. Anile, A.M., Mascali, G.: Theoretical foundations for tail electron hydrodynamical models in semiconductors. Appl. Math. Lett. 14, 245–252 (2001)
2. Anile, A.M., Romano, V.: Non parabolic band transport in semiconductors: closure of the moment equations. Contin. Mech. Thermodyn. 11, 307–325 (1999)
3. Ben Abdallah, N., Caceres, M.J., Carrillo, J.A., Vecil, F.: A deterministic solver for a hybrid quantum-classical transport model in nanoMOSFETs. J. Comput. Phys. 228(17), 6553–6571 (2009) Blokhin, A.M., Birkin, A.D.: Stability analysis of supersonic regime past infinite wedge. J. Appl. Mech. Tech. Phys. 36(4), 496–512 (1996)
4. Blokhin, A.M., Tkachev, D.L.: Local-in-time well-posedness of a regularized mathematical model for silicon MESFET. Z. Angew. Math. Phys. 61, 849–864 (2010)
5. Camiola, V.D., Romano, V.: 2DEG-3DEG charge transport model for MOSFET based on the maximum entropy principle. SIAM J. Appl. Math. 73, 1439–1459 (2013)
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