Numerical Method and Simulations
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Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-030-35993-5_8
Reference8 articles.
1. Ben Abdallah, N., Caceres, M.J., Carrillo, J.A., Vecil, F.: A deterministic solver for a hybrid quantum-classical transport model in nanoMOSFETs. J. Comput. Phys. 228(17), 6553–6571 (2009) Blokhin, A.M., Birkin, A.D.: Stability analysis of supersonic regime past infinite wedge. J. Appl. Mech. Tech. Phys. 36(4), 496–512 (1996)
2. Camiola, V.D., Mascali, G., Romano, V.: Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle. Contin. Mech. Thermodyn. 24, 417–436 (2012)
3. Camiola, V.D., Mascali, G., Romano, V.: Simulation of a double-gate MOSFET by a non-parabolic energy-transport model for semiconductors based on the maximum entropy principle. Math. Comput. Model. 58, 321–343 (2012)
4. Degond, P., Jüngel, A., Pietra, P.: Numerical discretization of energy-transport models for semiconductors with nonparabolic band structure. SIAM J. Sci. Comput. 22, 986–1007 (2000)
5. Galler, M., Schürrer, F.: A deterministic Solver to the Boltzmann-Poisson system including quantization effects for silicon-MOSFETs. In: Progress in Industrial Mathematics at ECMI 2006. Mathematics in Industry, vol. 12, pp. 531–536. Springer, Berlin (2008)
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