Advancements and Challenges in Extending Emission Range: Exploring InAs/InP as a Promising Alternative to InAs/GaAs Quantum Dots

Author:

Sabri Sara,Malek Rachid,Kassmi Khalil

Publisher

Springer Nature Switzerland

Reference10 articles.

1. Sabri, S., Malek, R., Kassmi, K.: Investigating emission wavelength control in InAs Quantum Dots for 1.55 µm telecommunications applications. Int. J. Sens. Wirel. Commun. Control (2024, submitted). (in press)

2. Sabri, S., Malek, R., Kassmi, K.: A theoretical study of InAs/InP and InAs/GaAs QDs systems: formation mechanisms and photoluminescence characterization. Mater. Today: Proc. 72, 3495–3501 (2023)

3. Diakite, Y.I., Malozovsky, Y., Bamba, C.O.: First principle calculation of accurate electronic and related properties of zinc blende indium arsenide (zb-InAs). Materials 15(10), 3690 (2022)

4. Grundmann, M.: Physics of Semiconductors, vol. 11. Springer, Heidelberg (2010). https://doi.org/10.1007/978-3-642-00710-1

5. Kittel, C.: Introduction to Solid State Physics, 8th edn (2021)

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