Basic Heterogeneous Bipolar|Bijunction Transistor (HBT) Properties

Author:

Banerjee Amal

Publisher

Springer Nature Switzerland

Reference12 articles.

1. Pulfrey, D. L. (1999). Heterojunction bipolar transistor, wiley encyclopedia of electrical and electronics engineering, Webster, J. G., Ed., John Wiley & Sons, Inc., vol. 8, 690–706.

2. Pulfrey, D. L., & Tarr, N. G. (1989). Introduction to microelectronic devices, Prentice-Hall p. 348.

3. Anholt, R. (1995). Electrical and thermal characterization of MESFET’s HEMTs, and HBTs. Boston: Artech House.

4. McAndrew, C., et al. (1996). VBIC95. The Vertical Bipolar Inter Company Model, IEEE Journal of Solid State Circuits, 31(10), 1475–1483.

5. Scott, J., Nonlinear III-V HBT Compact Models: Do we have what we need? 2001 IEEE Transactions on Microwave Technology and Techniques Symposium Digest, pp. 663–666.

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