Optical Power Screening Effects in Ge-on-Si Vertical Pin Photodetectors-Reference-Cited by-同舟云学术

Optical Power Screening Effects in Ge-on-Si Vertical Pin Photodetectors

Published:2023 Issue: Volume: Page:155-159
ISSN:1876-1100
Container-title:Proceedings of SIE 2022
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Author:

Alasio Matteo G. C.^ORCID,Franco Paolo,Tibaldi Alberto^ORCID,Bertazzi Francesco^ORCID,Namnabat Soha,Adams Donald,Gothoskar Prakash,Masini Gianlorenzo,Forghieri Fabrizio,Ghione Giovanni^ORCID,Goano Michele^ORCID

Publisher

Springer Nature Switzerland

Link

https://link.springer.com/content/pdf/10.1007/978-3-031-26066-7_24

Reference11 articles.

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2. Beling, A., Campbell, J.C.: High-speed photodiodes. IEEE J. Select. Topics Quantum Electron. 20(6), 3804507 (2014). https://doi.org/10.1109/JSTQE.2014.2341573

3. Chen, D., Zhang, H., Liu, M., Hu, X., Zhang, Y., Wu, D., Zhou, P., Chang, S., Wang, L., Xiao, X.: 67 GHz light-trapping-structure germanium photodetector supporting 240 Gb/s PAM-4 transmission. Photon. Res. 10(9), 2165–2171 (2022). https://doi.org/10.1364/PRJ.455291

4. Ghione, G.: Semiconductor Devices for High-Speed Optoelectronics. Cambridge University Press, Cambridge (2009)

5. Hu, W., Xie, X., Xu, Q., Zhang, W., Song, H.: Research progress of SiGe heterojunction photodetectors. In: Seventh Symposium on Novel Photoelectronic Detection Technology and Applications, vol. 11763, Proceedings of the SPIE, p. 11763A4. Kunming, China, March 2021. https://doi.org/10.1117/12.2588373

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