Analysis of a Single-Ended GaN-Based Drain-Pumped Mixer for Radar Applications
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Publisher
Springer Nature Switzerland
Link
https://link.springer.com/content/pdf/10.1007/978-3-031-26066-7_10
Reference7 articles.
1. Cidronali, A., Pagnini, L., Collodi, G., Passafiume, M.: A highly linear Ka-Band GaN-on-Si active balanced mixer for radar applications. IEEE Trans. Circuits Syst. I Regular Papers (2022). https://doi.org/10.1109/TCSI.2022.3193960
2. Gunnarsson, S.E., Wadefalk, N., Angelov, I., Zirath, H., Kallfass, I., Leuther, A.: A G-band (140–220 GHz) microstrip MMIC mixer operating in both resistive and drain-pumped mode. In: IEEE MTT-S International Microwave Symposium Digest 2008, pp. 407–410 (2008)
3. Shiba, S., et al.: An F-band fundamental mixer using 75-nm InP HEMTs for precise spectrum analysis. In: European Microwave Integrated Circuit Conference 2013, pp. 137–140 (2013)
4. Ellinger, F., et al.: 30–40-GHz drain-pumped passive-mixer MMIC fabricated on VLSI SOI CMOS technology. IEEE Trans. Microw. Theory Tech. 52(5), 1382–1391 (2004)
5. Pedro, J.C., Perez, J.: Accurate simulation of GaAs MESFET’s intermodulation distortion using a new drain-source current model. IEEE Trans. Microw. Theory Tech. 42(1), 25–33 (1994)
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