Hydrogenated Amorphous Silicon Thin-Film Transistor: A DC Analysis
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Publisher
Springer International Publishing
Link
https://link.springer.com/content/pdf/10.1007/978-3-031-24793-4_4
Reference20 articles.
1. Z. Hafdi, and M.S. Aida “Modeling and Simulation of Hydrogenated Amorphous Silicon Thin-Film Transistors,” Japanese Journal of Applied Physics Vol. 44, No. 3, pp. 1192–1198, 2005.
2. Y. Kuo, Plasma Etching and Deposition for a-Si: H Thin Film Transistors. J. Electrochem. Soc. 142, 2486 (1995)
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4. Z. Hafdi, in Amorphous silicon based MIS structures for solar cells applications: Electrical considerations. 1st International Conference & Exhibition on the Applications of Information Technology to Renewable Energy Processes and Systems (ITDREPS), pp. 20–25 (2013)
5. J.S. Choi, G.W. Neudeck, S. Luan, A Computer Model for Inter-Electrode Capacitance-Voltage Characteristics of an a-Si: H TFT. Solid-State Electron. 36, 223 (1993)
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