Operation of Neuronal Membrane Simulator Circuit for Tests with Memristor Based on Graphene and Graphene Oxide

Author:

Sparvoli Marina,Marma Jonas S.,Nunes Gabriel F.,Jorge Fábio O.

Publisher

Springer International Publishing

Reference9 articles.

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3. Dabrowski, K.M., Castaño, D.J., Tartar, J.L.: Basic neuron model electrical equivalent circuit: an undergraduate laboratory exercise. J. Undergraduate Neurosci. Educ. 12(1), A49–A52 (2013)

4. Yoo, D., Cuong, T.V., Hahn, S.H.: Effect of copper oxide on the resistive switching responses of graphene oxide film. Curr. Appl. Phys. 14(9), 1301–1303 (2014)

5. Xu, J., Xie, D., Feng, T., et al.: Scaling-down characteristics of nanoscale diamond-like carbon based resistive switching memories. Carbon 75, 255–261 (2014)

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Physical approach of a neuron model with memristive membranes;Chaos: An Interdisciplinary Journal of Nonlinear Science;2023-11-01

2. Simulation of Neuronal Membrane Behavior Based on Graphene Oxide Memristor;physica status solidi (a);2023-05-07

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