Author:
Rupp Jennifer,Valov Ilia,Ielmini Daniele
Publisher
Springer International Publishing
Reference16 articles.
1. M.A. Zidan, A. Chen, G. Indiveri, W.D. Lu, Memristive computing devices and applications. J. Electroceram. 39, 4–20 (2017)
2. H.-Y. Chen, S. Brivio, C.C. Chang, J. Frascaroli, T.H. Hou, B. Hudec, M. Liu, H. Lv, G. Molas, J. Sohn, S. Spiga, V.M. Teja, E. Vianello, H.-S.P. Wong, Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication. J. Electroceram. 39(1–4), 21–38 (2017)
3. S. Ambrogio, B. Magyari-Köpe, N. Onofrio, M.M. Islam, D. Duncan, Y. Nishi, A. Strachan, Modeling resistive switching materials and devices across scales. J. Electroceram. 39(1–4), 39–60 (2017)
4. I. Riess, Review of mechanisms proposed for redox based resistive switching structures. J. Electroceram. 39, 61–72 (2017)
5. Y. Yang, Y. Takahashi, A. Tsurumaki-Fukuchi, M. Arita, M. Moors, M. Buckwell, A. Mehonic, A.J. Kenyon, Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices. J. Electroceram. 39(1–4), 73–93 (2016)