Author:
Medina-Bailon Cristina,Sampedro Carlos,Padilla Jose Luis,Donetti Luca,Georgiev Vihar,Gamiz Francisco,Asenov Asen
Publisher
Springer International Publishing
Reference9 articles.
1. Fischetti, M.: Scaling MOSFETs to the limit: a physicist’s perspective. J. Comput. Electron. 2, 73–79 (2003)
2. Frank, D., Dennard, R., Nowak, E., Solomon, P., Taur, Y., Wong, H.: Device scaling limits of $$Si$$ MOSFETs and their application dependences. Proc. IEEE 89, 259–288 (2001)
3. Jungemann, C., Decker, S., Thoma, R., Eng, W.L., Goto, H.: Phase space multiple refresh: a versatile statistical enhancement method for Monte Carlo device simulation. In: 1996 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 1996 (IEEE Cat. No. 96TH8095), pp. 65–66 (1996)
4. Kim, J., Shin, H., Lee, C., Park, Y.J., Min, H.S.: A new weight redistribution technique for electron-electron scattering in the MC simulation. IEEE Trans. Electron Devices 51(9), 1448–1454 (2004)
5. Medina-Bailon, C., et al.: Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices. IEEE Trans. Electron Devices 66(3), 1145–1152 (2019). https://doi.org/10.1109/TED.2019.2890985