Performances Evaluation of Electric Vehicles Recharging Systems Implementing Silicon Carbide and Gallium Nitride Switches
Author:
Publisher
Springer Nature Switzerland
Link
https://link.springer.com/content/pdf/10.1007/978-3-031-48711-8_38
Reference3 articles.
1. Gareau, J., Hou, R., Emadi, A.: Review of loss distribution, analysis, and measurement techniques for GaN HEMTs. IEEE Trans. Power Electron. 35(7), 7405–7418 (2020)
2. She, X., Huang, A.Q., Lucía, Ó., Ozpineci, B.: Review of silicon carbide power devices and their applications. IEEE Trans. Ind. Electron. 64(10), 8193–8205 (2017)
3. Pellitteri, F., et al.: Power losses comparison between silicon carbide and silicon devices for an isolated DC-DC converter. In: 2021 IEEE 15th International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG), Florence, Italy, pp. 1–6 (2021)
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