Power Electronics Devices Based on Wide-Gap Semiconductors-Reference-Cited by-同舟云学术

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Power Electronics Devices Based on Wide-Gap Semiconductors

Published:2021 Issue: Volume: Page:389-435
ISSN:
Container-title:Handbook of Microwave and Radar Engineering
language:
Short-container-title:

Author:

Belous Anatoly

Publisher

Springer International Publishing

Link

http://link.springer.com/content/pdf/10.1007/978-3-030-58699-7_6

Reference47 articles.

1. https://docplayer.ru/45013546-Tehnologiya-sic-v-modulyah-semikron.html

2. https://www.psma.com/sites/default/files/uploads/tech-forums-semiconductor/presentations/11-market-and-technology-trends-wbg-power-module-packaging.pdf

3. http://www.compitech.ru/html.cgi/arhiv/00_06/stat_40.htm

4. http://phg.su/basis2/X75.HTM

5. http://hightolow.ru/transistor3.php

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In-Situ Ultrafast Sensing Techniques for Prognostics and Protection of SiC Devices;2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2022-11-07

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