Temperature dependency of the intrinsic carrier density of hydrogenated amorphous silicon in MOS structures-Reference-Cited by-同舟云学术

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Temperature dependency of the intrinsic carrier density of hydrogenated amorphous silicon in MOS structures

Published:1999-07-05 Issue:5 Volume:3 Page:245-250
ISSN:1432-8488
Container-title:Journal of Solid State Electrochemistry
language:
Short-container-title:Journal of Solid State Electrochemistry

Author:

Fahrner W. R.,Grabosch G.,Borchert D.,Man K.,Chan Y.,Kwong S.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Electrochemistry,Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/s100080050154.pdf

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Solution-processing of flexible thin-film negative-temperature-coefficient silicon thermistors using silicon nanoparticles;Japanese Journal of Applied Physics;2017-06-15

2. Analysis of the Ideality Factor of a-Si:H Solar Cells;Journal of Solar Energy Engineering;2011-02-01

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