Synthesis and single crystal growth of gallium phosphide by the liquid encapsulated vertical Bridgman technique-Reference-Cited by-同舟云学术

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Synthesis and single crystal growth of gallium phosphide by the liquid encapsulated vertical Bridgman technique

Published:1988-12 Issue:4 Volume:11 Page:269-275
ISSN:0250-4707
Container-title:Bulletin of Materials Science
language:en
Short-container-title:Bull. Mater. Sci.

Author:

Govinda Rajan K,Chandra Shekar N V,Rao G V N,Singh A J,Iyer R M

Publisher

Springer Science and Business Media LLC

Subject

Mechanics of Materials,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF02744560.pdf

Reference16 articles.

1. Bass S J and Oliver P E 1968Crystal Growth 3 286

2. Blum S E and Chikota R J 1973J. Electrochem. Soc. 120 588

3. Brice J C 1986Crystal growth processes (London: Blackie and Son)

4. De Kock A J R 1980Handbook on semiconductors (eds) T S Moss and S P Keller (Amsterdam: North-Holland) vol. 3, p. 247

5. De Kock A J R, Van De Wijgert W M, Hengst J H T, Roksnoer P J and Huybregts J M P L 1977J. Cryst. Growth 46 13

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1. Bulk Growth of Crystals of III–V Compound Semiconductors;Comprehensive Semiconductor Science and Technology;2011

2. Single crystal growth of CuxMo6Se8;Journal of Crystal Growth;1990-07

3. A new method to melt Chevrel phase superconducting compounds;Journal of Physics D: Applied Physics;1989-08-14

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