Rippled area formed by surface plasmon polaritons upon femtosecond laser double-pulse irradiation of silicon: the role of carrier generation and relaxation processes-Reference-Cited by-同舟云学术

Rippled area formed by surface plasmon polaritons upon femtosecond laser double-pulse irradiation of silicon: the role of carrier generation and relaxation processes

Published:2013-12-27 Issue:1 Volume:117 Page:77-81
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Derrien Thibault J.-Y.,Krüger Jörg,Itina Tatiana E.,Höhm Sandra,Rosenfeld Arkadi,Bonse Jörn

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-013-8205-2.pdf

Reference29 articles.

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