Correlation between electrical transport, microstructure and room temperature ferromagnetism in 200 keV Ni2+ ion implanted zinc oxide (ZnO) thin films-Reference-Cited by-同舟云学术

Correlation between electrical transport, microstructure and room temperature ferromagnetism in 200 keV Ni2+ ion implanted zinc oxide (ZnO) thin films

Published:2012-02-08 Issue:2 Volume:107 Page:393-400
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Joshi B.,Ghosh S.,Srivastava P.,Kumar P.,Kanjilal D.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-012-6785-x.pdf

Reference24 articles.

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3. J.W. Orton, M.J. Powell, Rep. Prog. Phys. 43, 1263 (1980)

4. L.L. Kazmerski, Polycrystalline and Amorphous Thin Films & Devices (Academic Press, New York, 1980)

5. Y. Natsume, H. Sakata, T. Hirayama, H. Yanagida, J. Appl. Phys. 72, 4202 (1992)

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