Endurance-write-speed tradeoffs in nonvolatile memories
Author:
Funder
Air Force Office of Scientific Research
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
http://link.springer.com/content/pdf/10.1007/s00339-016-9841-0.pdf
Reference18 articles.
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3. P. Cappelletti, A. Modelli, Flash Memory Endurance, in Flash Memories, ed. by P. Cappelletti, et al. (Springer, New York, 1999)
4. B. Chen, Y. Lu, B. Gao, Y. H. Fu, F. F. Zhang, P. Huang, Y. S. Chen, L. F. Liu, X. Y. Liu, J. F. Kang, Y. Y. Wang, Z. Fang, H. Y. Yu, X. Li, X. P. Wang, N. Singh, G. Q. Lo, and D. L. Kwong, Physical mechanisms of endurance degradation in TMO-RRAM. in Technical Digest International Electron Devices Meeting, Washington, DC, 2011, pp. 283–286
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