Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Reference25 articles.
1. B. J. Baliga, Fundamentals of power semiconductor devices. Springer Science & Business Media, (2010)
2. V. Khanna, “The insulated gate bipolar transistor (igbt) theory and design 1st ed,” Canada: Institute of Electrical and Electronics Engineers, (2003)
3. B.J. Baliga, M.S. Adler, R.P. Love, P.V. Gray, N.D. Zommer, The insulated gate transistor: a new three-terminal mos-controlled bipolar power device. IEEE Trans. Electron Devices 31(6), 821–828 (1984)
4. T. Fujihira, Theory of semiconductor superjunction devices. Jpn. J. Appl. Phys. 36(10R), 6254 (1997)
5. P. M. Shenoy, A. Bhalla, G. M. Dolny, “Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction mosfet,” in 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD’99 Proceedings (Cat. No. 99CH36312). IEEE, pp. 99–102 (1999)