Electronic state and photoionization cross section of a single dopant in GaN/InGaN core/shell quantum dot under magnetic field and hydrostatic pressure-Reference-Cited by-同舟云学术

Electronic state and photoionization cross section of a single dopant in GaN/InGaN core/shell quantum dot under magnetic field and hydrostatic pressure

Published:2018-05-22 Issue:6 Volume:124 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Aouami A. El,Feddi E.,Talbi A.,Dujardin F.,Duque C. A.^ORCID

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/article/10.1007/s00339-018-1856-2/fulltext.html

Reference33 articles.

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3. U. Perinetti, Optical Properties of Semiconductor Quantum Dots (Doctoral dissertation) (University of Pisa, Pisa, Italy, 2011)

4. G. Schmidt, Nanoparticles from theory to application, 2nd edn. (Wiley, Weinheim, 2010)

5. Q. Sun, Y.A. Wang, L.S. Li, D. Wang, T. Zhu, J. Xu, C. Yang, Y. Li, Nat. Photon. 1, 717 (2007)

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