Comparison of C face (000 $$\overline{1}$$) and Si face (0001) of silicon carbide wafers in femtosecond laser irradiation assisted chemical–mechanical polishing process-Reference-Cited by-同舟云学术

Comparison of C face (000 $$\overline{1}$$) and Si face (0001) of silicon carbide wafers in femtosecond laser irradiation assisted chemical–mechanical polishing process

Published:2022-11-21 Issue:12 Volume:128 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Chen Yuan-Di^ORCID,Liu Hsiang-Yi,Cheng Chiao-Yang,Chen‬ ‬Chih-Chun

Funder

Ministry of the Economic Affairs

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

https://link.springer.com/content/pdf/10.1007/s00339-022-06111-w.pdf

Reference29 articles.

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4. T. Umeda, M. Okamoto, R. Kosugi, S. Harada, R. Arai, Y. Sato, T. Makino, T. Ohshima, ECS Trans. 58, 55 (2013)

5. X.J. Ning, N. Huvey, P. Pirouz, J. Am. Ceram. Soc. 80, 1645 (2005)

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