Structural, morphological, and temperature-tuned bandgap properties of single-step thermally evaporated Sb2Se3 thin films

Abstract

AbstractIn this study, antimony selenide (Sb2Se3) thin films were deposited on a glass substrate through a single-step thermal evaporation process, employing sintered powder as a source material. A detailed investigation of the structural, morphological, and temperature-dependent optical properties of fabricated thin films was performed. The X-ray diffraction (XRD) pattern indicated the presence of the Sb2Se3 phase, characterized by an orthorhombic crystalline structure. Examination through scanning electron microscopy (SEM) revealed a fully covered, void-free, and densely packed morphology on the thin film surface. Raman spectrum of the film showed the vibrational characteristics of Sb2Se3. Transmission spectra of Sb2Se3 thin film were measured at various temperatures within the range of 10–300 K. The analysis of these measurements demonstrated that optical bandgap energy decreases from 1.28 to 1.25 eV as increasing temperature from 10 to 300 K. The variation of bandgap with temperature was accurately characterized by Varshni and Bose–Einstein relations to elucidate bandgap at 0 K, rate of change of bandgap, and Debye temperature. These findings in this study may be useful for advancing the development of Sb2Se3 film-based solar cell technology and its applications in optoelectronics.