Investigation of Sb-rich Si2Sb2+x Te6 material for phase change random access memory application-Reference-Cited by-同舟云学术

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Investigation of Sb-rich Si2Sb2+x Te6 material for phase change random access memory application

Published:2010-09-17 Issue:4 Volume:103 Page:1077-1081
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Zhou Xilin,Wu Liangcai,Song Zhitang,Rao Feng,Liu Bo,Yao Dongning,Yin Weijun,Feng Songlin,Chen Bomy

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-010-6042-0.pdf

Reference19 articles.

1. S. Lai, IEDM Tech. Dig., 255 (2003)

2. R. Bez, Microelectron. Eng. 80, 249 (2005)

3. M. Wuttig, Nat. Mater. 4, 265 (2005)

4. S.R. Ovshinsky, Phys. Rev. Lett. 21, 1450 (1968)

5. I. Friedrich, V. Weidenhof, W. Njoroge, P. Franz, M. Wuttig, J. Appl. Phys. 87, 4130 (2000)

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