Gate misalignment effects on analog/RF performance of charge plasma-based doping-less tunnel FET
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
http://link.springer.com/article/10.1007/s00339-017-1029-8/fulltext.html
Reference20 articles.
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3. W.Y. Choi, B.G. Park, J.D. Lee, T.J.K. Liu, Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec. IEEE Electron Device Lett. 28(8), 743–745 (2007)
4. A.M. Ionescu, H. Riel, Tunnel field-effect transistors as energy-efficient electronic switches. Nature 479(7373), 329–337 (2011)
5. B. Rajasekharan, R.J.E. Hueting, C. Salm, T. van Hemert, R.A.M. Wolters, J. Schmitz, Fabrication and characterization of the charge-plasma diode. IEEE Electron Device Lett. 31(6), 528–530 (2010)
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