Ultrashort-pulse-laser ablation of freestanding dielectric thin films

Abstract

AbstractUltrashort-pulse-laser ablation of dielectric thin films is strongly affected by the interference of the exciting laser pulse with itself, which causes the deposited energy to be confined to narrow regions equidistantly spaced along the propagation direction of the laser. We investigate how this affects the ablation mechanism of freestanding $$\hbox {Al}_2\hbox {O}_3$$ Al 2 O 3 thin films by analyzing the laser-generated structures with several post-mortem imaging and spectroscopic techniques. Close to the ablation threshold, the laser-irradiated region exhibits surface blistering. Higher intensities cause layers of material to be removed corresponding to ejection of material initiated from the regions of high excitation. Significantly above the ablation threshold, the laser-generated structure is remarkably stable and consists of a membrane of thickness corresponding to the distance between neighboring interference maxima, which is uniquely determined by the central wavelength of the laser pulse and the refractive index of the film. The electronic excitation as a function of depth is simulated using a multiple-rate-equation model in combination with finite-difference-time-domain propagation of the laser field. The simulations confirm the strongly localized excitation and thus correlate well with the observed laser-generated structures.