Fabrication of ON/OFF switching response based on n-Ni-doped MoO3/p-Si junction diodes using Ni-MoO3 thin films as n-type layer prepared by JNS pyrolysis technique-Reference-Cited by-同舟云学术

Fabrication of ON/OFF switching response based on n-Ni-doped MoO3/p-Si junction diodes using Ni-MoO3 thin films as n-type layer prepared by JNS pyrolysis technique

Published:2020-02-20 Issue:3 Volume:126 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Balaji M.,Chandrasekaran J.,Raja M.,Marnadu R.,Ramamurthy M.,Shkir Mohd.

Funder

DST

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-020-3392-0.pdf

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