A novel gate engineered L-shaped dopingless tunnel field-effect transistor
Author:
Funder
National Natural Science Foundation of China
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
https://link.springer.com/content/pdf/10.1007/s00339-020-03554-x.pdf
Reference35 articles.
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2. A.C. Seabaugh, Q. Zhang, Low-voltage tunnel transistors for beyond CMOS logic. Proc. IEEE 98(12), 2095–2110 (2010). https://doi.org/10.1109/Jproc.2010.2070470
3. A.M. Ionescu, H. Riel, Tunnel field-effect transistors as energy-efficient electronic switches. Nature 479(7373), 329–37 (2011). https://doi.org/10.1038/nature10679
4. W.Y. Choi, W. Lee, Hetero-gate-dielectric tunneling field-effect transistors. IEEE Trans. Electron Devices 57(9), 2317–2319 (2010). https://doi.org/10.1109/Ted.2010.2052167
5. Z. Yan, C. Li, J. Guo, Y. Zhuang, A GaAs Sb /in Ga0.47As heterojunction Z-gate TFET with hetero-gate-dielectric. Superlattices Microstruct. 129, 282–293 (2019). https://doi.org/10.1016/j.spmi.2019.04.006
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