Plasma-based nanoarchitectonics for vertically aligned dual-metal carbon nanotube field-effect transistor (VA-DMCNFET) device: effect of plasma parameters on transistor properties-Reference-Cited by-同舟云学术

Plasma-based nanoarchitectonics for vertically aligned dual-metal carbon nanotube field-effect transistor (VA-DMCNFET) device: effect of plasma parameters on transistor properties

Published:2021-12-10 Issue:1 Volume:128 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Kansal Mansha,Sharma Suresh C.^ORCID

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

https://link.springer.com/content/pdf/10.1007/s00339-021-05096-2.pdf

Reference34 articles.

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3. C. Qiu, Z. Zhang, M. Xiao, Y. Yang, D. Zhong, L.-M. Peng, Scaling carbon nanotube complementary transistors to 5-nm gate lengths. Science 355(6322), 271 (2017)

4. I. Santolia, A. Tewari, S.C. Sharma, R. Sharma, Effect of doping on growth and field emission properties of spherical carbon nanotube tip placed over cylindrical surface. Phys. Plasmas 21(6), 063508 (2014)

5. A. Rochefort, D.R. Salahub, P. Avouris, Effects of finite length on the electronic structure of carbon nanotubes. J. Phys. Chem. B 103(4), 641–646 (1999)

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