Quantum transport properties of AB bilayer graphene via tight-binding approach with NEGF formalisms
Author:
Funder
UTM Fundamental Research
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s00339-024-07695-1.pdf
Reference21 articles.
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3. P. Gava, M. Lazzeri, A.M. Saitta, F. Mauri, Ab initio study of gap opening and screening effects in gated bilayer graphene. Phys. Rev. B 79(16), 165431 (2009)
4. A. Kuzmenko, I. Crassee, D. Van Der Marel, P. Blake, K. Novoselov, Determination of the gate-tunable band gap and tight-binding parameters in bilayer graphene using infrared spectroscopy. Phys. Rev. B 80(16), 165406 (2009). https://doi.org/10.1103/PhysRevB.80.165406
5. M.W. Chuan, K.L. Wong, A. Hamzah, S. Rusli, N.E. Alias, C.S. Lim, M.L.P. Tan, Two-dimensional modelling of uniformly doped silicene with aluminium and its electronic properties. Adv. Nano Res. 9(2), 105–112 (2020). https://doi.org/10.1298/anr.2020.9.2.105
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