1. G. Youssef, M. El-Nahass, S. El-Zaiat, and M. Farag, Int. J. Semicond. Sci. Technol. 6, 1 (2016).
2. M.R. Poponiak, Method for gettering contaminants in monocrystalline silicon, US Patent 3,929,529, 1975.
3. G.E. Brock, Thermal migration-porous silicon technique for forming deep dielectric isolation, US4180416A Google Patents, 1979.
4. M. Zhang, Q. Xiao, C. Chen, L. Li, and W. Yuan, Appl. Therm. Eng. 17, 115303 (2020).
5. M. Shrivastava, R. Kumari, M.R. Parra, P. Pandey, H. Siddiqui, and F.Z. Haque, Opt. Mater. 73, 763 (2017).