Radiation Effects in GaN-Based High Electron Mobility Transistors
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Engineering,General Materials Science
Link
http://link.springer.com/content/pdf/10.1007/s11837-015-1359-y.pdf
Reference50 articles.
1. D.C. Look, D.C. Reynolds, J.W. Hemsky, J.R. Sizelove, R.L. Jones, and R.J. Molnar, Phys. Rev. Lett. 79, 2273 (1997).
2. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, N.G. Kolin, D.I. Merkurisov, V.M. Boiko, A.V. Korulin, and S.J. Pearton, J. Vac. Sci. Technol. B 28, 608 (2010).
3. B.D. White, M. Bataiev, S.H. Gross, X. Hu, A. Karmarkar, D.M. Fleetwood, R.D. Schrimpf, W.J. Schaff, and L.J. Brillson, IEEE Trans. Nucl. Sci. 50, 1934 (2003).
4. A.P. Karmarkar, B. Jun, D.M. Fleetwood, D.D. Schrimpf, R.A. Weller, B.D. White, L.S. Brillson, and U.K. Mishra, IEEE Trans. Nucl. Sci. 51, 3801 (2004).
5. X. Hu, A. Karmarkar, J. Bongim, D.M. Fleetwood, R.D. Schrimpf, R.D. Geil, R.A. Weller, B.D. White, M. Bataiev, L.J. Brillson, and U.K. Mishra, IEEE Trans. Nucl. Sci. 50, 1791 (2003).
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