Optoelectronic and Photonic Characteristics of Al/p-Si Diode with Boric Acid-Doped Zinc Oxide Interlayer-Reference-Cited by-同舟云学术

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Optoelectronic and Photonic Characteristics of Al/p-Si Diode with Boric Acid-Doped Zinc Oxide Interlayer

Published:2023-07-06 Issue:9 Volume:75 Page:3587-3600
ISSN:1047-4838
Container-title:JOM
language:en
Short-container-title:JOM

Author:

Al-Sehemi Abdullah G.,Tataroglu A.,Karabulut Abdulkerim,Dere Aysegul,Al-Ghamdi Ahmed A.,Yakuphanoglu F.

Funder

King Khalid University

Fırat University

Publisher

Springer Science and Business Media LLC

Subject

General Engineering,General Materials Science

Link

https://link.springer.com/content/pdf/10.1007/s11837-023-05979-0.pdf

Reference56 articles.

1. K.K. Yong, H. Kang, W. Lee, C.W. Lee, J. Park, and H.S. Lee, Mater. Sci. Semicond. Process. 33, 154 (2015).

2. N.M. Ravindra, S. Abedrabbo, O.H. Gokce, F. Tong, A. Patel, R. Velagapudi, G.D. Williamson, and W.P. Maszara, IEEE Transac. Compon. Packag. Manufac. Technol. Part A 21, 441 (1998).

3. S. Berleb, A.G. Muckl, and W. Brutting, Synth. Met. 111, 341 (2000).

4. A. Karabulut, A. Türüt, and Ş Karataş, J. Mol. Struct. 1157, 513 (2018).

5. K.J. Saji, Y.P. Venkata Subbaiah, K. Tian, and A. Tiwari, Thin Solid Film 605, 193 (2016).

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