On the physics of clean silicon surface-Reference-Cited by-同舟云学术

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On the physics of clean silicon surface

Published: Issue: Volume: Page:241-274
ISSN:
Container-title:Advances in Solid State Physics
language:
Short-container-title:

Author:

Mönch Winfried

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/BFb0108574.pdf

Reference112 articles.

1. G. Heiland, Fortschritte der Physik 9, 393 (1961).

2. G. Heiland, Festkörperprobleme III, 125 (1962).

3. G. Heiland, 33rd Physikertagung 1968, ed.: Deutsche Physikalische Gesellschaft, Teubner, Stuttgart 1969, p. 301.

4. S. G. Davison, J. D. Levine, in Solid State Physics Vol. 25, p. 2, eds. H. Ehrenreich, F. Seitz, and D. Turnbull, Academic Press, New York 1970.

5. A. Many, Y. Goldstein, N. B. Grover, “Semiconductor Surfaces”, North-Holland Publ., Amsterdam 1965.

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of excited-oxygen exposures on spectra and transition density of states for cleaved Si(111) from L1L2,3V and L2,3VV Auger transitions;Journal of Physics C: Solid State Physics;1982-11-20

2. The electronic structure of cleaved silicon (111) surfaces following adsorption of aluminium;Journal of Physics C: Solid State Physics;1980-05-20

3. Beugung langsamer Elektronen (LEED);Handbuch Festkörperanalyse mit Elektronen, Ionen und Röntgenstrahlen;1979

4. Electronic structure of the ideal and reconstructed Si(001) surface;Physical Review B;1978-01-15

5. Surface Photovoltage Spectroscopy;Topics in Surface Chemistry;1978

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