Multiplicity factor and diffraction geometry factor for single crystal X-ray diffraction analysis and measurement of phase content in cubic GaN/GaAs(001) epilayers-Reference-Cited by-同舟云学术

Multiplicity factor and diffraction geometry factor for single crystal X-ray diffraction analysis and measurement of phase content in cubic GaN/GaAs(001) epilayers

Published:2001-04 Issue:4 Volume:44 Page:497-503
ISSN:1006-9283
Container-title:Science in China Series A: Mathematics
language:en
Short-container-title:Sci. China Ser. A-Math.

Author:

Qu Bo,Zheng Xinhe,Wang Yutian,Feng Zhihong,Han Jingyi,Liu Shi’an,Lin Shiming,Yang Hui,Liang Junwu

Publisher

Springer Science and Business Media LLC

Subject

General Mathematics

Link

http://link.springer.com/content/pdf/10.1007/BF02881887.pdf

Reference15 articles.

1. Yang, H., Zheng, L.X., Li, J.B. et al., Cubic-phase GaN light-emitting diode, Appl. Phys. Lett., 1999, 74(17): 2498.

2. Trampert, A., Brandt, O., Yang, H. et al., Direct obsenration of the initial nucleation and epitaxial growth of metastable cubic GaN on GaAs(001), Appl. Phys. Lett., 1997, 70(5): 583.

3. Balakrishnan, K., Feuillet, G., Ohta, K. et al., Structural analysis of cubic GaN through X-ray pole figure generation, Jpn. J. Appl. Phys., 1997, 36(10, part 1): 6221.

4. Basu, S.N., Lei, T., Moustakas, T.D., Microstructures of GaN films deposited on (001) and (111) Si substrates using electron cyclotron resonance assisted-molecular beam epitaxy, J. Mater. Res., 1994, 9(9): 2370.

5. Powell, R.C., Lee, N.E., Kim, Y.W. et a1., Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: growth kinetics, microstructure, and properties, J. Appl. Phys., 1993, 73(1): 189.

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