Promotion of boron diffusion and gettering by employing thin Al2O3 layer as a reaction barrier-Reference-Cited by-同舟云学术

Promotion of boron diffusion and gettering by employing thin Al2O3 layer as a reaction barrier

Published:2021-03-06 Issue:7 Volume:32 Page:8205-8212
ISSN:0957-4522
Container-title:Journal of Materials Science: Materials in Electronics
language:en
Short-container-title:J Mater Sci: Mater Electron

Author:

Zhang Zhen^ORCID,Yang Ning,Lu Minglei,Yuan Xiao,Ye Xiaojun,Liu Cui,Li Hongbo

Funder

National Key Research and Development program of China

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s10854-020-05124-6.pdf

Reference12 articles.

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2. H.C. Sio, D. Macdonald, Direct comparison of the electrical properties of multicrystalline silicon materials for solar cells: conventional p-type, n-type and high performance p-type. Sol. Energy Mater. Sol. Cells 144, 339–346 (2016)

3. B. Singha, C.S. Solanki, Boron-rich layer properties formed by boron spin on dopant diffusion in n -type silicon. Mater. Sci. Semicond. Process. 57, 83–89 (2017)

4. B. Singha, C.S. Solanki, Impact of a boron rich layer on minority carrier lifetime degradation in boron spin-on dopant diffused n-type crystalline silicon solar cells. Semicond. Sci. Technol. 31, 035009 (2016)

5. N. Yang, S. Li, J. Yang, H. Li, X. Ye, C. Liu, X. Yuan, Avoidance of boron rich layer formation in the industrial boron spin-on dopant diffused n-type silicon solar cell without additional oxidation process. J. Mater. Sci.: Mater. Electron. 29, 20081–20086 (2018)