Enhanced polarization fatigue behavior in lead-free ferroelectric (K, Na)NbO3 thin films by Mn doping-Reference-Cited by-同舟云学术

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Enhanced polarization fatigue behavior in lead-free ferroelectric (K, Na)NbO3 thin films by Mn doping

Published:2024-08 Issue:23 Volume:35 Page:
ISSN:0957-4522
Container-title:Journal of Materials Science: Materials in Electronics
language:en
Short-container-title:J Mater Sci: Mater Electron

Author:

Phu Nguyen Dang,Le Xuan Luc,Duong Nguyen Xuan^ORCID

Funder

Trường Đại học Công nghệ, Đại học Quốc Gia Hà Nội

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s10854-024-13340-7.pdf

Reference36 articles.

1. E. Fatuzzo, W.J. Merz, Ferroelectricity (North-Holland, Amsterdam, 1967)

2. M.E. Lines, A.M. Glass, Principles and Applications of Ferroelectrics and Related Materials (Oxford University Press, Oxford, 2001)

3. J. Scott, Ferroelectric Memories (Springer, Berlin, 2000)

4. B.-E. Park, H. Ishiwara, M. Okuyama, S. Sakai, S.-M. Yoon, Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications (Springer, Dordrecht, 2016)

5. M. Dawber, J. Scott, A model for fatigue in ferroelectric perovskite thin films. Appl. Phys. Lett. 76, 1060–1062 (2000)

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